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METHOD OF DEPOSITING SINGLE BUFFER LAYER OF COATED CONDUCTOR AND THE COATED CONDUCTOR DEPOSITED BY THE METHOD
METHOD OF DEPOSITING SINGLE BUFFER LAYER OF COATED CONDUCTOR AND THE COATED CONDUCTOR DEPOSITED BY THE METHOD
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机译:镀层导体的单缓冲层的沉积方法和沉积该方法的镀层导体
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摘要
PURPOSE: A method of depositing a single buffer layer of a coated conductor and a coated conductor deposited by the method are provided to insert a thin CeO 2 nucleation layer deposited at a low deposition speed between a substrate and a CeO 2 epitaxial layer, thereby obtaining a low substrate temperature and a high speed deposition rate. CONSTITUTION: A method of depositing a single buffer layer of a coated conductor comprises the next step. CeO2 of the thickness of 3 to 100nm is deposited on a substrate, thereby forming a core forming layer. The CeO2 of the thickness of 10 to 500nm is deposited on the top of the core forming layer, thereby generating an epitaxial layer. A deposition is performed by a sputtering, a pulsed laser deposition or an electron beam deposition. The substrate is nickel or a nickel alloy. The nickel alloy contains cobalt(Co), chrome(Cr), vanadium(V), molybdenum(Mo), tungsten(W) or boron(B).
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