METHOD OF DEPOSITING SINGLE BUFFER LAYER OF COATED CONDUCTOR AND THE COATED CONDUCTOR DEPOSITED BY THE METHOD

摘要

PURPOSE: A method of depositing a single buffer layer of a coated conductor and a coated conductor deposited by the method are provided to insert a thin CeO 2 nucleation layer deposited at a low deposition speed between a substrate and a CeO 2 epitaxial layer, thereby obtaining a low substrate temperature and a high speed deposition rate. CONSTITUTION: A method of depositing a single buffer layer of a coated conductor comprises the next step. CeO2 of the thickness of 3 to 100nm is deposited on a substrate, thereby forming a core forming layer. The CeO2 of the thickness of 10 to 500nm is deposited on the top of the core forming layer, thereby generating an epitaxial layer. A deposition is performed by a sputtering, a pulsed laser deposition or an electron beam deposition. The substrate is nickel or a nickel alloy. The nickel alloy contains cobalt(Co), chrome(Cr), vanadium(V), molybdenum(Mo), tungsten(W) or boron(B).