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ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR AND METHOD FOR MANUFACTURING ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR
ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR AND METHOD FOR MANUFACTURING ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR
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机译:使用分布式布拉格反射器的紫外线发射二极管和使用分布式布拉格反射器的紫外线发射二极管的制造方法
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摘要
PURPOSE: An ultraviolet light emitting diode which uses a dispersion Bragg reflection device and a manufacturing method thereof are provided to arrange a dispersion Bragg reflection layer by alternatively laminating aluminum nitride, silicon nitride, and silicon dioxide, thereby significantly improving optical extraction efficiency with a simple process. CONSTITUTION: An n-type semiconductor layer(20), an active layer(30), and a p-type semiconductor layer(40) are arranged on a substrate(10). A dispersion Bragg reflection layer(60) is arranged on the p-type semiconductor layer. The dispersion Bragg reflection layer is arranged by alternatively laminating aluminum-nitride or silicon nitride and silicon dioxide. A p-type electrode(70) is arranged by etching a part of the dispersion Bragg reflection layer. An n-type electrode(50) is arranged on the active layer.
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