A reform method of semiconductor thin film, a reformed semiconductor thin film and a test method thereof, a thin film transistor made of the semiconductor film and image displayer having a circuit using the semiconductor thin film

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display apparatus having a method for modifying a semiconductor thin film, a modified semiconductor thin film, a method for evaluating the same, and a thin film transistor formed from the semiconductor thin film, and a circuit constituted by the thin film transistor, wherein the optical system of the laser annealing apparatus is amorphous. A transmittance distribution filter is usually provided in which the irradiation light intensity distribution in the scanning direction of the substrate on which the silicon semiconductor thin film is formed is controlled as a distribution having an energy region above the undetermined threshold on the light intensity side of high energy and an energy region dissolving only the surface layer. By applying to the excimer laser annealing method, the phase shift stripe mask method or the SLS method using a line beam of the method of forming a polycrystalline semiconductor by the laser annealing method by reducing the height of the surface projections of the polycrystal obtained by the respective methods Surface roughness of polycrystalline semiconductor film It provides the technology.