首页> 外国专利> Assembly for projection lens of projection illumination system for microlithography for imaging semiconductor wafer structures, has evaluation device that determines adjusting parameter in degrees of freedom of movement of mask and sensor

Assembly for projection lens of projection illumination system for microlithography for imaging semiconductor wafer structures, has evaluation device that determines adjusting parameter in degrees of freedom of movement of mask and sensor

机译:用于对半导体晶片结构成像的微光刻的投射照明系统的投射透镜的组件,具有评估装置,该评估装置确定掩模和传感器的移动自由度的调整参数

摘要

The assembly has a measuring device (14) for measuring adjusting parameters. The device includes an object-sided measuring mask (20), an image-sided sensor (24) for executing wavefront measurement at a projection lens (12), and an evaluation device (30). The evaluation device determines the adjusting parameter in three degrees of freedom of movement of the mask and/or the sensor based on the wavefront measurement result. A two-dimensional detector (28) is arranged in a plane conjugated to a pupil plane of the lens. An independent claim is also included for a method for measuring an adjusting parameter.
机译:该组件具有用于测量调节参数的测量装置(14)。该装置包括物体侧测量掩模(20),用于在投影透镜(12)处执行波前测量的像侧传感器(24)以及评估装置(30)。评估装置基于波前测量结果以掩模和/或传感器的三个运动自由度确定调节参数。二维检测器(28)布置在与透镜的光瞳平面共轭的平面中。还包括用于测量调节参数的方法的独立权利要求。

著录项

  • 公开/公告号DE102011075371A1

    专利类型

  • 公开/公告日2012-05-16

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT GMBH;

    申请/专利号DE20111075371

  • 发明设计人 HAIDNER HELMUT;GOEPPERT MARKUS;

    申请日2011-05-05

  • 分类号G03F9/00;G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:53

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