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Assembly for projection lens of projection illumination system for microlithography for imaging semiconductor wafer structures, has evaluation device that determines adjusting parameter in degrees of freedom of movement of mask and sensor
Assembly for projection lens of projection illumination system for microlithography for imaging semiconductor wafer structures, has evaluation device that determines adjusting parameter in degrees of freedom of movement of mask and sensor
The assembly has a measuring device (14) for measuring adjusting parameters. The device includes an object-sided measuring mask (20), an image-sided sensor (24) for executing wavefront measurement at a projection lens (12), and an evaluation device (30). The evaluation device determines the adjusting parameter in three degrees of freedom of movement of the mask and/or the sensor based on the wavefront measurement result. A two-dimensional detector (28) is arranged in a plane conjugated to a pupil plane of the lens. An independent claim is also included for a method for measuring an adjusting parameter.
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