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Embodiments of the structures of interconnections svt formed of an insulator and a conductive zone located in the contour and separate from the contour

机译:由绝缘体和位于轮廓中并与轮廓分开的导电区形成的互连结构的实施例

摘要

The present invention relates to a method of manufacturing an interconnection structure comprising: the formation in a substrate (100) of at least a trench (103, 105) forming a closed contour and of at least one hole (102, 104) situated inside the said closed contour, the trench and the hole being separated by a zone of the substrate, the method furthermore comprising the steps of filling the trench by a dielectric material (111) and of the hole by a conductive material (117, 122).
机译:本发明涉及一种制造互连结构的方法,该方法包括:在衬底(100)中形成至少一个形成闭合轮廓的沟槽(103、105)和位于该内部的至少一个孔(102、104)。在所述闭合轮廓上,沟槽和孔被衬底的区域隔开,该方法还包括以下步骤:通过介电材料(111)填充沟槽,并且通过导电材料(117、122)填充孔。

著录项

  • 公开/公告号FR2953992B1

    专利类型

  • 公开/公告日2012-05-18

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20090058999

  • 发明设计人 GABRIEL PARES;

    申请日2009-12-15

  • 分类号H01L21/768;H01L23/48;

  • 国家 FR

  • 入库时间 2022-08-21 17:04:20

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