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FILM DEPOSITION METHOD FOR INSULATING FILM LAYER BY PLASMA GENERATOR, FILM DEPOSITION METHOD FOR CONDUCTIVE FILM LAYER BY PLASMA GENERATOR, INSULATING FILM LAYER, CONDUCTIVE FILM LAYER, AND PLASMA GENERATOR
FILM DEPOSITION METHOD FOR INSULATING FILM LAYER BY PLASMA GENERATOR, FILM DEPOSITION METHOD FOR CONDUCTIVE FILM LAYER BY PLASMA GENERATOR, INSULATING FILM LAYER, CONDUCTIVE FILM LAYER, AND PLASMA GENERATOR
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机译:用等离子发生器绝缘膜的膜沉积方法,等离子发生器,绝缘膜,导电膜和等离子膜的导电膜的沉积方法
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摘要
PROBLEM TO BE SOLVED: To provide a plasma film deposition method capable of forming a high quality film.;SOLUTION: In a plasma state, a superimposed bias voltage is applied to a bias voltage application part 11, and in a negative voltage interval, ions collide with a workpiece 14 to form a film layer on the workpiece surface, and in a positive voltage interval 53, ions with weak adhesion force on the film layer separate from the film layer and move, and electrons collide with the film layer to peel ions of weak adhesion force and a part of the film layer, leaving a first time strong adhesion film layer by a film of strong adhesion force, and by repeating the negative voltage interval and the positive voltage interval, a multilayer film is deposited which is composed of the first time strong adhesion film layer to n-th time strong adhesion film layer.;COPYRIGHT: (C)2013,JPO&INPIT
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