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P-type semiconducting behavior with a stable in both the Ni-doped ZnO and Li
P-type semiconducting behavior with a stable in both the Ni-doped ZnO and Li
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机译:在掺杂Ni的ZnO和Li中均具有稳定的P型半导体行为
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摘要
A method for low resistivity and to grow a p-type ZnO thin film stable with a high mobility is provided. The method includes providing a chamber in the n-type Li-Ni co-doped ZnO target, comprising: providing the chamber substrate, and forming on the substrate a thin film by ablating a target.
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