Lab of Plasma Physics and Materials;
Beijing Institute of Graphic Communication;
Beijing 102600;
People's Republic of China;
Key Laboratory of Beam Technology of Ministry of Education;
College of Nuclear Science and Technology;
Beijing Normal University;
Beijing 100875;
People's Republic of China;
HiPIMS; Al-N co-doped; ZnO film; substrate temperature; p-type conduction; N+/N2+;