Method and system for determining the pressure compensation factor in the ion implanter

摘要

The present invention provides a method and system for determining a pressure compensation factor used in the ion implantation apparatus used for testing the work piece or a small number of one (21). Placing (21) for testing a workpiece which has a band at least one region (10) in an ion implantation system, the step of giving (Kused) pressure compensation factor is predicted (302), the method, the Using (Kused) pressure compensation factor, which is the expected (10) an ion implantation system, it is possible to inject the ion beam to the band regions of the at least one test work piece (21), the ion implantation system (10 measuring) ion beam current) in the ((Rs (measured step of measuring pressure and Iimplanted) and (P) and (304, 306), the sheet resistance associated with (21) for testing the workpiece, which is said injection) pressure ion beam current (Rs (measured)), said measured sheet resistance step (308), pressure compensation factor, which is the predicted (Kused), said measured (Iimplanted), said measured (P), and according to the desired sheet resistance, and a (310) step of determining a new compensation factor for pressure (Kpredicted).