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HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS
HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS
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机译:用于沉积含铱薄膜的异质铱前体
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摘要
The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula:; XIrYA,;wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.
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机译:本发明提供了一种在基板上沉积含铱膜的方法,该方法包括以下步骤:在反应器中提供至少一个基板;向反应器中引入至少一种具有下式的含铱前体: <?in-line-formulae description =“在线公式” end =“ lead”?> XIrY A Sub>,<?in-line-formulae description =“在线公式” end =“ (a)等于1或2,并且i)当A为1时,X是二烯基配体,Y是二烯配体; ii)当A为2时,a)X为二烯基配体且Y选自CO和乙烯配体,b)X为选自H,烷基,烷基酰胺,醇盐,烷基甲硅烷基,烷基甲硅烷基酰胺,烷基氨基和氟代烷基的配体,以及Y分别为二烯配体,c)X为二烯基配体,Y为二烯配体。使至少一种含铱前体在反应器中在等于或大于100℃的温度下反应;将至少一种含铱前体的反应形成的含铱膜沉积在至少一个基底上。
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