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DUAL PORT REGISTER FILE MEMORY CELL WITH REDUCED SUSCEPTIBILITY TO NOISE DURING SAME ROW ACCESS
DUAL PORT REGISTER FILE MEMORY CELL WITH REDUCED SUSCEPTIBILITY TO NOISE DURING SAME ROW ACCESS
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机译:双端口寄存器文件存储单元在同一行访问期间具有降低的噪声易感性
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摘要
A memory cell is formed by storage latch having a true node and a complement node. The cell includes a write port operable in response to a write signal on a write word line to write data from write bit lines into the latch, and a separate read port operable in response to a read signal on a read word line to read data from the latch to a read bit line. The circuitry of the memory cell is configured to address voltage bounce at the complement node during reading of the memory (where the voltage bounce arises from a simultaneous write to another memory cell in a same row).
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