首页> 外国专利> Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers

Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers

机译:铜电镀工艺可在整个晶圆上均匀沉积并在半贵金属涂层的晶圆上无空隙填充

摘要

Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.
机译:公开了沉积铜籽晶层的方法,该铜晶种层用于随后在其上电镀铜的体层。可以通过包括CVD,PVD和电镀的不同工艺来沉积铜籽晶层。在用于沉积铜籽晶层的电镀方法中,公开了用于沉积铜合金籽晶层的方法,利用非腐蚀性电解质在半贵金属层上沉积铜籽晶层的方法,处理该半贵金属的方法。沉积铜籽晶层的金属层,以及促进在半导体晶片上沉积更均匀的铜籽晶层的方法。

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