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Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers
Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers
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机译:铜电镀工艺可在整个晶圆上均匀沉积并在半贵金属涂层的晶圆上无空隙填充
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摘要
Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.
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