QUANTUM DOT BASED ON InP CAPABLE OF HAVING PROPERTIES WITH THE SAME LEVEL AS A QUANTUM DOT BASED ON CADMIUM AND, A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A manufacturing method for a quantum dot is provided to provide a quantum dot with excellent photo stability and chemical stability without any change in wavelength.;CONSTITUTION: A quantum dot comprises: a core which is formed of InP; and a second shell layer which surrounds the first shell layer. The band gap of the second shell layer is smaller than the band gap of the first shell layer. A manufacturing method for the quantum dot comprises a step of manufacturing InP nanocrystals by mixing a first indium solution and a first phosphorous solution; a step of forming nanocrystals which have the first shell layer surrounding the InP nanocrystals by mixing the first indium solution and first phosphorous solution; and a step of forming nanocrystals which have the second shell layer surrounding the first shell layer by putting ZnSe precursor solution into the solution.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) PL intensity; (BB) Wavelength(nm)