METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, A METHOD FOR PROCESSING A SUBSTRATE, A SUBSTRATE PROCESSING APPARATUS, AND A NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM CAPABLE OF IMPROVING THE ETCHING RATE OF HYDROGEN FLUORIDE LIQUID

摘要

PURPOSE: A method for manufacturing a semiconductor device, a method for processing a substrate, a substrate processing apparatus, and a non-transitory computer-readable recording medium are provided to form a nitride layer which has tolerance to hydrogen fluoride at low temperatures.;CONSTITUTION: A process chamber(201) accommodates a substrate(200). A first gas supply system supplies source gas to the substrate in the process chamber. A second gas supply system supplies nitrous gas to the substrate. A third gas supply system supplies hydrogen-containing gas to the substrate. A fourth gas supply system supplies nitrogen gas and inert gas to the substrate. A first nozzle(233a), a second nozzle(233b), and a third nozzle(233c) pass through the lower sidewall of a reaction tube(203).;COPYRIGHT KIPO 2013