3D NONVOLATILE MEMORY DEVICE INCLUDING A COMMON SOURCE SELECTION LINE AND A COMMON DRAIN SELECTION LINE

摘要

PURPOSE: A 3D nonvolatile memory device is provided to easily implement memory cells according to a memory block by separating a drain selection line located on a boundary of adjacent memory blocks.;CONSTITUTION: String arrays include 2N strings (ST1-ST2N). A plurality of bit lines are connected to one string array. A common source selection line commonly controls source selection transistors of the strings included in a memory block. A first common drain selection line commonly controls drain selection transistors of a first string and a 2N-th string. A second common drain selection line commonly controls drain selection transistors of the remaining strings except the first string and the 2N-th string.;COPYRIGHT KIPO 2013