Brief description of embodiments of a deep trench in a substrate of the component microelectronics

摘要

A method of making a trench depth in a substrate comprises a succession of elementary cycles of etching etching a portion of the trench. Each elementary cycle comprises: (▪ a deposit of a passivation layer on the internal walls of the portion of the trench etched during previous cycles; ▪ an anisotropic plasma ion etching pulses of the portion of the trench etched during the preceding cycles, the engraving: o being carried out in an atmosphere comprising a passivating species, and comprising at least a first sequence of etching followed by a second sequence of the etching power of less than the power of the first sequence of etching.