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It possesses the field-effect transistor which designates the compound oxide of perovskite die as channel formation and the memory device null perovskite
It possesses the field-effect transistor which designates the compound oxide of perovskite die as channel formation and the memory device null perovskite
PROBLEM TO BE SOLVED: To provide a field effect transistor which changes resistance by injecting a highly concentrated charge into a channel using an electrical double layer method and also to provide a memory element using the field effect transistor as a switching element.;SOLUTION: A single crystal film, which has a perovskite structure and comprises a composite oxide represented by chemical formula : A1-xBxNiO3, where A is one element selected from rare earth elements, B is at least one element of the rare earth elements except A, and x is an actual number satisfying 0≤x≤1), is used for a channel layer.;COPYRIGHT: (C)2012,JPO&INPIT
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机译：要解决的问题：提供一种场效应晶体管，该晶体管通过使用双电层方法将高度集中的电荷注入到沟道中来改变电阻，并且还提供一种使用该场效应晶体管作为开关元件的存储元件。具有钙钛矿结构并包含化学式为A 1-x B x NiO 3 的复合氧化物的单晶膜，其中A是从稀土元素中选择的一种元素，B是除A以外的稀土元素中的至少一种元素，并且x是满足0le; x＆le; 1）的实际数字，用于沟道层。 ）2012，JPO＆INPIT
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