首页> 外国专利> SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING COUNTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS

SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING COUNTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS

机译:通过结合基于国家的评估和过程变异的整合来优化源,目标和掩码

摘要

Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output
机译:公开了用于确定用于光刻工艺的源形状,掩模形状和目标形状的方法和系统。一种这样的方法包括:接收源,掩模和目标约束,并基于该源,掩模和目标约束来制定优化问题,并结合基于电路的物理设计质量的针对目标形状的基于轮廓的评估。此外,通过对整个工艺条件变化进行积分以同时确定源形状,掩模形状和目标形状来解决优化问题。另外,输出确定的源形状和掩模形状

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号