AMORPHOUS PHASE YTTRIUM-DOPED INDIUM ZINC OXIDE THIN FILM TRANSISTORS AND METHOD FOR MAKING SAME

摘要

Sol-gel-processed thin-film transistors (TFTs) with amorphours Y—In—Zn—O (YIZO) as an active layer are fabricated with various mole ratios of Y, which indicates that Y³⁺ could play the role of carrier suppressor in InZnO (IZO) systems and reduce off current of YIZO-TFT and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio.