首页>
外国专利>
METHOD OF MANUFACTURING INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY METHOD
METHOD OF MANUFACTURING INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY METHOD
展开▼
机译:制造氧化铟锌半导体薄膜晶体管的方法和方法制造的氧化铟锌半导体薄膜晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a method of manufacturing an indium zinc oxide semiconductor thin film transistor. A gate electrode and a gate insulating layer are formed on a substrate. A semiconductor active layer is formed by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer. A source electrode and a drain electrode are formed in the upper part of the semiconductor active layer. Therefore, the indium zinc oxide semiconductor thin film transistor can be manufactured.;COPYRIGHT KIPO 2014; [Reference numerals] (AA) Start; (BB) End; (S110) Step of forming a gate electrode on a substrate; (S120) Step of forming a gate insulating layer to cover the gate electrode on the substrate; (S130) Step of forming a semiconductor active layer by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer; (S140) Step of forming a source electrode and a drain electrode in the upper part of the semiconductor active layer
展开▼