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Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
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机译:等离子处理设备,等离子处理方法,等离子膜沉积设备和等离子膜沉积方法
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摘要
A plasma film deposition apparatus (plasma processing apparatus) includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface. The second antenna 11b is supplied with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by a power supply. Lines of magnetic force F2, heading in a direction opposite to the direction of lines of magnetic force F1 appearing at the site of the antenna 11a, are thereby generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated over a wide range within a tubular container 2. 展开▼
机译:等离子膜沉积设备(等离子处理设备)包括围绕天线 11 B> a I>布置的第二天线 11 B> b I>并且位于天花板表面的外部。向第二天线 11 B> b I>提供的电流的流动方向与提供给天线 11 B> < I> a I>通过电源。磁力线F 2 B>的方向与出现在天线 11 B处的磁力线F 1 B>的方向相反从而在第二天线 11 B> b I>的位置处生成> a I>。因此,即使在管状容器 2内的大范围内产生均匀的等离子体的情况下,壁面方向的磁通密度也降低。 B>
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