首页> 外国专利> A novel high speed low power three input static cmos exclusive -or logic gate circuite

A novel high speed low power three input static cmos exclusive -or logic gate circuite

机译:一种新颖的高速低功耗三输入静态CMOS异或逻辑门电路

摘要

This invention relates to logic gate circuits of digital integrated circuits. It is embodied with multiple inputs particularly showing 3 input circuit which is of static type, consisting of pull up and pull down paths to make the output of the design to "0" or "1* depending on the inputs given to it. The pull up path consists of plurality of p-FET"s; depending on the combination of the inputs given at least three p-FET"s are electrically connected between high supply voltage and the output terminal. Similarly, pull down path consists of plurality of n-FET"s among which three n-FET"s are electrically connected between low supply voltage and the output terminal depending on the inputs applied. Minimum number of pre-charge devices is used by connecting them incisively to all the intermediate nodes of pull up and pull down paths to gain high speed. n-FET"s are used as pre-charge devices in the pull up path whereas, p-FET"s are used as pre-charge devices in the pull down path to charge the intermediate nodes to far supply voltage when they are disconnected from the near supply voltage and the output. Some of the inverted signals are extracted from the circuit itself.
机译:本发明涉及数字集成电路的逻辑门电路。它由多个输入组成,特别显示了3个静态类型的输入电路,由上拉和下拉路径组成,根据给定的输入,使设计的输出为“ 0”或“ 1 *”。上行路径由多个p-FET组成;取决于给定的输入的组合,在高电源电压和输出端子之间电连接至少三个p-FET。类似地,下拉路径由多个n-FET组成,其中三个n-FET根据所施加的输入,它们在低电源电压和输出端子之间电连接,通过将它们精确地连接到上拉和下拉路径的所有中间节点以提高速度,可以使用最少数量的预充电设备。 “ s用作上拉路径中的预充电设备,而p-FET”用作上拉路径中的预充电设备,以在中间节点与近端电源断开连接时将中间节点充电至远端电源电压电压和输出,一些反相信号是从电路本身提取的。

著录项

  • 公开/公告号IN2014CH01237A

    专利类型

  • 公开/公告日2014-06-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN1237/CHE/2014

  • 申请日2014-03-10

  • 分类号H03K19/00;

  • 国家 IN

  • 入库时间 2022-08-21 15:57:19

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