Method for manufacturing a light-emitting diode having a heterogeneous AlGaN layer

摘要

Manufacturing LED, comprises: forming a stack of layers intended to emit light comprising first, second and third layers of aluminum gallium nitride, the second layer, positioned between the first and third layers, having a different aluminum gallium nitride composition from that of the first and third layers; and implementing demixing of the second layer of aluminum gallium nitride carried out after formation of the second layer. An independent claim is also included for LED obtained by the process.