MANUFACTURING METHOD FOR UV RAYS EMITTING DIODE AND UV RAYS EMITTING DIODE

摘要

The present invention relates to a manufacturing method for UV rays emitting diode and a UV rays emitting diode. According to the present invention, the manufacturing method for UV rays emitting diode is to manufacture a nitride semiconductor layer on which an N type clad layer, an active layer, and a P type clad layer are successively laminated and a nitride semiconductor based UV rays diode including a p-electrode and an n-electrode. When depositing the p-electrode on the P type clad layer, the p-electrode is deposited on 10-70% of the upper area of the P type clad layer. The shape of the p-electrode can be the shapes of mesh, punch, or one-dimensional grid. The UV rays emitting diode manufactured by the manufacturing method of the present invention is manufactured by a simple process while the area exposing the P-type clad layer is large, so that high efficient UV rays emitting diode can be provided by increasing the permeability of UV rays via parts on which p-electrode is not deposited.;COPYRIGHT KIPO 2015