Plassma Enhanced Chemical Vapour Deposition Apparatus And Plassma Enhanced Chemical Vapour Deposition Method

摘要

the present invention provides a plasma chemical vapor deposition apparatus and method help . This device is a vacuum chamber containing a substrate holder for mounting a substrate , one end is disposed to surround the plasma in the interior of the dielectric tube , the dielectric tube is mounted in the through hole formed in the top surface of the vacuum chamber and the RF power being provided dielectric tube the evaporation source comprises providing a metal vapor to the plasma generating section , and the dielectric tube to generate . Metal vapor is passed through the plasma to the substrate is provided with metal - nitride or metal - oxide film to form a ;