Resistor switching element, memory components, memory module, a process for the preparation of a resistive switching element and a process for the preparation of a resistive memory device

摘要

Switching element (10) for switching between at least two states with different electrical resistance, comprising:– a first electrode (12),– a second electrode (20) and– at least one resistor switching rods (18a, 18b, 18c, 18d) which, by way of gear comprises metal oxynitride and the with the first electrode (12) and the second electrode (20) and electrically connected at least partially in a thermal blocking matrix (24) with a thermal conductivity which is lower than the thermal conductivity of the resistance of the switching state of the column (18a, 18b, 18c, 18d), is embedded.