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Combinatorial plasma enhanced deposition and etch techniques

机译:组合等离子体增强沉积和蚀刻技术

摘要

According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
机译:根据本公开的各种实施例,描述了用于增强的沉积和蚀刻技术的设备和方法,包括:基座,该基座具有嵌入在该基座中的至少两个电极;该基座上方的喷淋头;连接至该基座的等离子体气体源。喷头,其中,所述喷头构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域,以及可操作地连接到所述喷头和所述至少两个电极的电源,所述等离子体中的等离子体基本上包含在与一个电极对应的区域中至少两个电极。

著录项

  • 公开/公告号US9245744B2

    专利类型

  • 公开/公告日2016-01-26

    原文格式PDF

  • 申请/专利权人 INTERMOLECULAR INC.;

    申请/专利号US201414253712

  • 发明设计人 CHI-I LANG;SUNIL SHANKER;TONY P. CHIANG;

    申请日2014-04-15

  • 分类号C23C16/50;C23C16/509;H01L21/02;C23C16/44;C23C16/455;H01J37/32;C23C16/02;C23C16/458;H01L21/67;H01L21/3065;

  • 国家 US

  • 入库时间 2022-08-21 14:29:22

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