deposition process of ito and iton thin films, ito and iton thin films and their use

摘要

deposition process of ito and iton thin films, ito and iton thin films and their use The present invention relates to the process of depositing ito and iton thin films. These materials were evaporated on a silicon surface and were subjected to annealing processes in nitrogen and oxygen atmosphere. The characterization was made to identify the electrical, optical and structural properties, being possible its application for environmental purposes, such as the manufacture of solar cells reducing expenses with electric energy in the place as a renewable energy source.