MANUFACTURING METHOD FOR DUAL-GATE TFT SUBSTRATE, AND STRUCTURE OF DUAL-GATE TFT SUBSTRATE

摘要

Provided are a manufacturing method for a dual-gate TFT substrate, and a structure of the dual-gate TFT substrate. In the manufacturing method for the dual-gate TFT substrate, a bottom gate (2), a first insulating layer (3), an island-like semiconductor layer (4) and a second insulating layer (5) are sequentially manufactured on a substrate (1); a second metal layer is deposited, patterning processing is performed on the second metal layer via a photomask, and a source (61), a drain (62) and a top gate (63) are formed at the same time; a third insulating layer (7) and a pixel electrode (8) are sequentially manufactured. TFT stability is increased, the number of photomasks is reduced, the process flow is shortened, the manufacturing procedure is simplified, and the production costs are decreased. The structure of the dual-gate TFT substrate is simple, TFT stability is relatively good, and the structure is easy to manufacture.