MANUFACTURING METHOD FOR DUAL-GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE, AND STRUCTURE OF DUAL-GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE

摘要

A manufacturing method for a dual-gate oxide semiconductor TFT substrate, and a structure of the dual-gate oxide semiconductor TFT substrate. The manufacturing method for the dual-gate oxide semiconductor TFT substrate uses a halftone mask plate to perform a photomask process to both complete patterning of an oxide semiconductor layer and obtain an oxide conductor layer (53') via ion doping. Patterning processing is performed simultaneously on a bottom gate insulating layer (31) and a top gate insulating layer (32) via a photomask process. Patterning processing is performed simultaneously on a second metal layer and a third metal layer via a photomask process, and a first source (81), a first drain (82), a second source (83), a second drain (84), a first top gate (71) and a second top gate (72) are obtained. Patterning processing is performed simultaneously on a second flat layer (9), a passivation layer (8) and the top gate insulating layer (32) via a photomask process. The number of photomask processes is reduced to nine, the processes are effectively simplified, production efficiency is increased, and production costs are decreased.