ATOMIC LAYER DEPOSITION METHOD USING SOURCE PRECURSOR TRANSFORMED BY HYDROGEN RADICAL EXPOSURE

摘要

Source precursor molecules injected into a substrate reacts to hydrogen radicals, produced in hydrogen plasma before reaction to a reaction precursor, which replaces functional groups of the reaction precursor (for example, methyl groups of an ethyl group) with hydrogen. Source precursor molecules of an additional cycle are injected into the substrate, and a part thereof occupies a part of the substrate which remains and is not occupied by the methyl functional groups not existing now. This increases density of the source precursor molecules (for example, reaction places) on the substrate. Moreover, reactivity of the source precursor molecules exposed to the hydrogen radicals (or H2 plasma) is increased.;COPYRIGHT KIPO 2016