MANUFACTURING METHOD OF CATALYST-FREE LOW-TEMPERATURE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE LOW-TEMPERATURE SUBSTRATE GROWN GRAPHENE, AND MANUFACTURING APPARATUS OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE

摘要

Provided is a manufacturing method of catalyst-free low-temperature substrate grown graphene. More specifically, provided is a manufacturing method of catalyst-free low-temperature substrate grown graphene, comprising the following steps: (a) preparing a substrate on which a substrate layer is formed; (b) supplying carbon-containing gas at a temperature below 500C and conducting inductively coupled plasma-chemical vapor deposition (ICP-CVD); and (c) growing graphene on the substrate layer without comprising a catalyst layer.;COPYRIGHT KIPO 2016