CHARGE TRAPPING NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME, AND METHOD OF OPERATING THE CHARGE TRAPPING NON-VOLATILE MEMORY DEVICE

摘要

The present invention relates to a charge trapping nonvolatile memory device, capable of achieving high speed operation using a metal plug as a charge transistor. The charge trapping nonvolatile memory device includes: a source region and a drain region disposed in an upper portion of a substrate and spaced apart from each other by a first trapping region, a channel region, and a second trapping region; a gate stack structure disposed on the substrate of the channel region; a first tunnel insulation layer, a first charge trap layer, and a first blocking insulation layer disposed over the first trapping region; a second tunnel insulation layer, a second charge trap layer, and a second blocking insulation layer disposed on the substrate of the second trapping region; an interlayer insulation layer disposed over the substrate to cover the gate stack structure; a first contact plug and a second contact plug which penetrate the interlayer insulation layer and are in contact with the source region and the drain region, respectively; and a third contact plug which penetrates the interlayer insulation layer to be in contact with the top surface of the gate stack structure, and is arranged to overlap the first charge trap layer in the first trapping region and the second charge trap layer in the second trapping region.