Diode with a p-n junction, which has an adjustable heterostructure, self-positioning on HgCdTe, for imaging signal imaging in the infrared region of the spectrum

摘要

1. A device having at least one heterostructured p / n diode containing an HgCdTe-based substrate, mainly n-doped, said substrate containing for each diode: a first part (4) having a first cadmium concentration, a second part ( 11) having a second cadmium concentration greater than the first cadmium concentration, the second part, or concentrated part (11), forming a heterostructure with the first part (4), p + doped zone (9) or p-doped zone located in concentrated part (11), continuing in ne the first part (4) and forming the p / n junction (10) with the n-doped portion of the first part (4), or the base substrate (1), in which the concentrated part (11) is located only in the p + doped zone (9 ) and form a pocket (12), essentially with a constant concentration of cadmium. 2. A device according to claim 1, wherein the pocket (12) has a base located at a substantially constant average distance (D) relative to the p / n junction (10). 3. The device according to claim 2, wherein when it contains at least two adjacent heterostructured p / n diodes, the pockets (12) of two adjacent diodes are separated, and the average relative distance (D) in one of the two diodes is substantially equal relative average distance (D) in another diode. 4. The device according to any one of paragraphs. 1-3, in which the p + doped zone (9) is doped with an acceptor dopant (8) .5. A device according to claim 4, wherein the acceptor dopant (8) is arsenic. A device according to claim 1, wherein the base substrate (1) is made of HgCdTe, where x has a value between 0.15 and 0.95, and describes a first cadmium concentration. The device according to claim 6, in which the pocket (12) is made of HgCdTe, where y has a value�