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HETEROJUNCTION GRAPHENE NANORIBBON, RESONANCE TUNNEL DIODE AND PRODUCTION METHOD OF THE SAME

机译:异质结石墨烯纳米管,共振隧道二极管及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a stable production method of a graphene nanoribbon heterostructure with controlled lengths of respective regions, concerning a heterojunction graphene nanoribbon, a resonance tunnel diode, and a production method of the same.SOLUTION: A heterojunction graphene nanoribbon comprising a first graphene nanoribbon element 3 and a third graphene nanoribbon element 5, which are arranged on a substrate 1, of which the edge structure along the longer direction is an arm chair type, and of which the widths in the shorter direction are different from each other, is formed by covalent-bonding both ends of the first graphene nanoribbon element 3 with second graphene nanoribbon elements 4 in the longer direction, and by covalent-bonding an end of the second graphene nanoribbon element 4 with the third graphene nanoribbon element 5 in the longer direction.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种稳定的,具有受控的各个区域的长度的石墨烯纳米带异质结构的制造方法,涉及异质结石墨烯纳米带,共振隧道二极管及其制造方法。第一石墨烯纳米带元件3和第三石墨烯纳米带元件5被布置在基板1上,该基板1的沿长边方向的边缘结构为扶手椅型,并且沿短边方向的宽度彼此不同。通过在长方向上将第一石墨烯纳米带元件3的两端与第二石墨烯纳米带元件4共价键合,以及通过在第二石墨烯纳米带元件4的一端与第三石墨烯纳米带元素5共价键合而形成。方向较长。选定的图纸:图1

著录项

  • 公开/公告号JP2017043495A

    专利类型

  • 公开/公告日2017-03-02

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20150164406

  • 发明设计人 YAMAGUCHI JUNICHI;

    申请日2015-08-24

  • 分类号C01B32/15;C01B32/18;C01B32/182;H01L21/329;H01L29/88;H01L29/06;H01L51/00;H01L51/30;H01L51/40;B82Y10/00;

  • 国家 JP

  • 入库时间 2022-08-21 14:00:11

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