Computational Study of Electron Transport Properties in Graphene Nanoribbon and Nanoribbon-based Resonant Tunneling Diodes

摘要

In this paper, electron transport properties, such as energy transmission, band structures and current-voltage characteristics of graphene nanoribbon (GNR) have been studied. The band energy of GNR increases with the decrease in ribbon width. Thus the double-barrier quantum well (DBQW) requirements for a resonant tunneling diode (RTD) can be achieved by fabricating GNRs of different width together. So using the same modelling approach as GNRs, RTDs made from GNRs have been studied. The non-equilibrium Green’s function and $pi$-orbital tight binding model has been used to model the structures. A uniform numerical analysis have been used to investigate the properties of all the GNR-based structures studied in this paper. The computed results in this paper are in agreement with previous works in literature.