SACRIFICIAL FILM COMPOSITION, METHOD FOR PREPARING SAME, SEMICONDUCTOR DEVICE HAVING VOIDS FORMED USING SAID COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAID COMPOSITION

摘要

[Problem];To provide such a composition for producing a sacrifice layer as has excellent properties in both heat resistance and storage stability, and also to provide a process for producing a semiconductor device using the composition.;[Solution];Disclosed is a composition for producing a sacrifice layer. The composition comprises a solvent and a polymer having a repeating unit containing a nitrogen atom with a lone pair, and contains particular transition metals only in a very low content. Also disclosed is a process using the composition as a sacrificial material for producing a semiconductor device comprising a porous material.