首页> 外国专利> Method for obtaining composites of copper oxides and the transition metals doped composites of copper oxides and for using them as the semiconductor optoelectronic systems and logical gates

Method for obtaining composites of copper oxides and the transition metals doped composites of copper oxides and for using them as the semiconductor optoelectronic systems and logical gates

机译:获得铜氧化物和过渡金属掺杂的铜氧化物复合物并将其用作半导体光电系统和逻辑门的方法

摘要

the object of the application is a way to receive a semiconductor composite material based on copper oxides cuo and cu2o and above.material, doped ions (ag + than +, mn2 +, co2 +, fe3 +) to optoelektronicznych of logic in which the semiconductor material is prepared by wyprau017canie nanokrystalicznego copper iodide favourably in aerobic conditions, preferably in a temperature 400u00b0c by at least j one hour.the object of the application is also using the above described as semiconductor materials, optoelektroniczne systems and logical gate (two channel optoelektroniczny demultiplekser), in which the response is generated by the logical result of two types of incentives - impu lsu luminous and applied potential giving answer positive, negative or indifferent.
机译:本申请的目的是一种接收基于铜的氧化物cuo和cu2o及以上的半导体复合材料的方法。材料,掺杂离子(ag +大于+,mn2 +,co2 +,fe3 +)被掺杂到光电逻辑中,通过在有氧条件下,优选在温度400℃下至少一小时,通过wyk纳米碘化铜制备半导体材料。本申请的目的还在于使用上述半导体材料,光电电子系统和逻辑门(两通道光电耦合器),其中响应是由两种类型的激励的逻辑结果生成的-激励光和施加电势使答案为正,负或无差异。

著录项

  • 公开/公告号PL417104A1

    专利类型

  • 公开/公告日2017-11-06

    原文格式PDF

  • 申请/专利权人 WOJTYŁA SZYMON;BARAN TOMASZ;

    申请/专利号PL20160417104

  • 发明设计人 SZYMON WOJTYŁA;TOMASZ BARAN;

    申请日2016-05-04

  • 分类号C01G3/02;B22F1/00;H01L21/00;

  • 国家 PL

  • 入库时间 2022-08-21 13:36:48

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