首页>
外国专利>
SiC CMP HALITE SALTS AS SILICON CARBIDE ETCHANTS FOR ENHANCING CMP MATERIAL REMOVAL RATE FOR SIC WAFER
SiC CMP HALITE SALTS AS SILICON CARBIDE ETCHANTS FOR ENHANCING CMP MATERIAL REMOVAL RATE FOR SIC WAFER
展开▼
机译:SiC CMP HALITE盐作为碳化硅设备,可提高SIC晶片的CMP材料去除率
展开▼
页面导航
摘要
著录项
相似文献
摘要
There are silicon carbide - (sic) - etching agent is described, with the general formula mxo2, wherein m is an alkali metal, x is a halogen and o is oxygen. If it with a grinding agent powder in the form of an aqueous slurry is mixed, this acts mxo2-Etching agent as a triboelectric chemical reagent, through the sic - material removal rate lies in the chemical mechanical polishing (cmp) is increased. The material removal rates, in this case, can sometimes in comparison to the slurry without halite - etchant rise by several orders of magnitude. Typical metals in the formula mxo2 are k (potassium) and na (sodium), x comprises cl (chlorine), br (bromine) and i (iodine). All the rows of mxo2-Compounds belong to the chemical family of metallhalite or ammoniumhalite. Sodium chlorite, naclo2, the simplest and most available member of the halite - family, is a typical example. The increased polishing rate can be used, for example, the throughput of cmp in the polishing of sic - substrates, to significantly increase. The polishing waste water from the cmp - process can be due to the absence of toxic heavy metal - ions in the polishing formulations with ease in the waste water - processing plants are treated.
展开▼