首页> 外国专利> SCHOTTKY DIODE, SCHOTTKY DIODE ARRAY AND METHOD OF MANUFACTURING SCHOTTKY DIODE

SCHOTTKY DIODE, SCHOTTKY DIODE ARRAY AND METHOD OF MANUFACTURING SCHOTTKY DIODE

机译:肖特基二极管,肖特基二极管阵列和制造肖特基二极管的方法

摘要

PROBLEM TO BE SOLVED: To provide a Schottky diode, a Schottky diode array and a method of manufacturing a Schottky diode.SOLUTION: A Schottky diode 100 includes an insulation substrate and a Schottky diode unit, and the Schottky diode unit is installed on a surface of the insulation substrate. The Schottky diode unit includes a first electrode 104, a semiconductor structure 108 and a second electrode 106. The first electrode is installed on the surface of the insulation substrate 102. The semiconductor structure includes a first end part and a second end part installed so as to be opposed to the first end part. The first end part of the semiconductor structure is laid on the first electrode, and the first electrode is located between the first end part of the semiconductor structure and the insulation substrate. The second end part of the semiconductor structure is installed on the surface of the insulation substrate, and the second electrode is installed at the second end of the semiconductor structure. The second end part of the semiconductor structure is located between the second electrode and the insulation substrate. The semiconductor structure is a nano-scale semiconductor structure.SELECTED DRAWING: Figure 1
机译:解决的问题:提供肖特基二极管,肖特基二极管阵列和制造肖特基二极管的方法。解决方案:肖特基二极管100包括绝缘衬底和肖特基二极管单元,并且肖特基二极管单元安装在表面上绝缘基板的厚度。肖特基二极管单元包括第一电极104,半导体结构108和第二电极106。第一电极安装在绝缘基板102的表面上。半导体结构包括第一端部和第二端部,从而安装成与第一端部分相对。半导体结构的第一端部放置在第一电极上,并且第一电极位于半导体结构的第一端部和绝缘基板之间。半导体结构的第二端部安装在绝缘基板的表面上,第二电极安装在半导体结构的第二端。半导体结构的第二端部位于第二电极和绝缘基板之间。半导体结构是纳米级的半导体结构。图1

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号