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Electronic device including a semiconductor memory having variable resistance structure with magnetic correction layer
Electronic device including a semiconductor memory having variable resistance structure with magnetic correction layer
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机译:包括具有可变电阻结构的具有磁校正层的半导体存储器的电子设备
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摘要
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and the semiconductor memory may include a substrate; a plurality of structures formed over the substrate to be spaced apart from each other, each structure comprising a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and a magnetic correction layer formed adjacent to the plurality of structures and structured to reduce an influence to the free layer by a stray magnetic field generated by the pinned layer.
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