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MULTI-BIT-PER-CELL MEMORY DEVICE BASED ON THE UNIDIRECTIONAL SPIN HALL MAGNETORESISTANCE
MULTI-BIT-PER-CELL MEMORY DEVICE BASED ON THE UNIDIRECTIONAL SPIN HALL MAGNETORESISTANCE
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机译:基于单向自旋霍尔磁阻的多位每单元存储器
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摘要
A multilayer structure comprising FM/NM/FM layers enhances the amplitude of the unidirectional spin Hall magnetoresi stance (USMR) thanks to an additional FM/NM layer interface. The USMR can be used to detect the in-plane magnetization direction of each FM layer perpendicular to the current injection. Detection relies on second harmonic resistance measurements driven by the USMR with possible contribution of Joule heating-induced magnetothermal effects (ANE and SSE). The four different magnetization states Formula (I) of the FM/NM/FM layers give rise to four unique resistance levels, which can be read out by a simple two-terminal electric measurement. As a result, this FM/NM/FM multilayer structure can be used in a lateral, two-terminal device to store multiple magnetic bits. Moreover, the magnetic states can be manipulated by spin-orbit torques, opening the possibility for all-electrical operation.
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