Method for producing a passivation layer system for semiconductor substrates and semiconductor substrate with passivation layer system and the use thereof as a photoelectrode

摘要

A method of making a passivation layer system for semiconductor substrates, at least comprising the steps. Providing a semiconductor substrate having a hydrogen-terminated surface, b. Providing a suspension of catalyst nanoparticles in an alcoholic solution of an oxidizing agent and immersing the semiconductor substrate therein, c. Negative polarization of the semiconductor substrate in the suspension of catalyst nanoparticles in the dark with respect to another semiconductor substrate as a counter electrode with a voltage between - 1 V and -20 V and a duration between 5 min and 90 min at room temperature andd. Remove the substrate from the suspension and rinse the surface with alcohol.