首页> 外国专利> A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

机译:一种制造单晶合成金刚石产品的方法和使用所述方法制造的单晶合成金刚石产品

摘要

A single crystal CVO synthetic diamond product comprising: a flat base; a tip; sloped side walls extending between the flat base and the tip; and a thickness from the flat base to the tip of at least 1.3 mm, wherein the flat base forms a plane which lies within 20° of a {110} crystallographic plane, and wherein dislocation defects extend through the single crystal CVD synthetic diamond product in a direction from the flat base to the hp with an average direction of the dislocation defects lying within 20° of a direction perpendicular to the plane of the flat base. The diamond may contain less than 1 ppm of single substitutional nitrogen as measured by electron paramagnetic resonance.
机译:一种单晶CVO合成金刚石产品,包括:扁平基底;和小费;在平底和尖端之间延伸的倾斜侧壁;从扁平基底到尖端的厚度至少为1.3毫米,其中扁平基底形成一个平面,该平面位于{110}晶体平面的20°范围内,并且位错缺陷延伸穿过单晶CVD合成金刚石产品。从平坦基底到hp的方向,位错缺陷的平均方向在垂直于平坦基底平面的方向的20°之内。通过电子顺磁共振测量,金刚石可以包含小于1ppm的单个取代氮。

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