Epitaxial growth of diamond single crystal on surface of milled diamond seeds at high pressure and high temperature

摘要

Diamond single crystal was epitaxially grown on the surface of diamond seeds with rough planes at high pressure and high temperature (HPHT) conditions .Fe80Ni20alloy powder was used as catalyst / solvent and natural flake-like graphite was used as carbon source . Diamond single crystals were grown on the diamond seeds at 4 .8 GPa and 1500 K . The morphology of the samples was observed by SEM . The mechanism of diamond growth with smooth planes from original seed with rough planes was studied .