首页>
外国专利>
Coupled-domains disturbance matrix generation for fast simulation of wafer topography proximity effects
Coupled-domains disturbance matrix generation for fast simulation of wafer topography proximity effects
展开▼
机译:耦合域干扰矩阵生成,可快速模拟晶片形貌邻近效应
展开▼
页面导航
摘要
著录项
相似文献
摘要
A coupled-domains method for generating disturbance matrices used in correcting topography proximity effects (TPE) for integrated circuit (IC) designs that include inhomogeneous substrates. The IC design is modeled and divided into domains (z-direction regions), each domain defined by upper/lower horizontal domain boundaries and optical properties generated by its associated geometry and material composition. Fourier-space representations are utilized to determine discrete electrical and magnetic field components for each domain that are integrated to derive domain transfer matrices, which are then multiplied to produce a total transfer matrix, which is then used to generate the disturbance matrix. The disturbance matrix may then be utilized by a model-based mask correction tool to calculate light intensity values in the photoresist layer. The corrected mask design is then used to generate a physical mask utilized in the subsequent fabrication of an IC device based on the IC design.
展开▼