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INFRARED DETECTION FILM, INFRARED DETECTION SENSOR AND INFRARED DETECTION DISPLAY APPARATUS INCLUDING THE INFRARED DETECTION FILM, AND METHOD OF MAKING THE INFRARED DETECTION FILM
INFRARED DETECTION FILM, INFRARED DETECTION SENSOR AND INFRARED DETECTION DISPLAY APPARATUS INCLUDING THE INFRARED DETECTION FILM, AND METHOD OF MAKING THE INFRARED DETECTION FILM
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机译:红外检测膜,红外检测传感器和红外检测显示装置,包括红外检测膜,以及制造红外检测膜的方法
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摘要
An infrared detection film includes a gate electrode, a gate insulating layer, a majority-carrier channel layer, at least one drain terminal, at least one source terminal, and a photovoltaic semiconductor layer. The gate insulating layer is formed on the gate electrode. The majority-carrier channel layer is formed on the gate insulating layer. Each of the at least one drain terminal and the at least one source terminal is disposed on the majority-carrier channel layer and is spaced apart from the gate electrode. The photovoltaic semiconductor layer is disposed on an exposed portion of the majority-carrier channel layer exposed between the at least one drain terminal and the at least one source terminal.
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