CRYSTALIZED MONITOR METHOD, LASER ANNEALING APPARATUS, AND LASER ANNEALING METHOD

摘要

According to the present invention, a film thickness calculation value of each film constituting a laminated structure in a non-treatment area which is adjacent to a treatment area to be annealed, and is not irradiated with a laser beam, is calculated; a crystallization level of the treatment area is calculated by fitting a second spectral spectrum measurement value of the treatment area and a second spectral spectrum calculation value calculated from the film thickness calculation value; and laser energy of the laser beam which a TFT substrate that is to be subjected to the next laser annealing treatment is irradiated with is adjusted.