METHOD OF FABRICATING GALLIUM NITRDED BASED SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a gallium nitride semiconductor device is disclosed. This method comprises the steps of preparing a gallium nitride substrate having a lower surface and a top surface, growing gallium nitride semiconductor layers on the upper surface side of a gallium nitride substrate to form a semiconductor laminated structure, And separating at least a portion of the gallium nitride substrate from the structure. Thus, the gallium nitride substrate can be easily separated from the semiconductor laminated structure.